Analysis of the change in the composition of the CdTe surface upon implantation of O₂⁺ ions and subsequent annealing

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Abstract

The methods of implantation of O₂⁺ ions into a single-crystal CdTe/Mo(111) film followed by annealing at Т = 800 K for 30 min resulted in the obtained CdTeO3 film. It has been established that in the valence band of the CdTeO3 film there is a 3rd maximum due to the excitation of electrons from 5s Cd electrons and 2p O electrons and bending 5s Cd + 2pO electrons. At implantation of O₂⁺ ions with E0 ≥ 10 keV, Cd-Te-O type compounds were formed in the near-surface layer; therefore, a three-layer nanosystem of the CdTe/CdTeO/CdTe type was formed.

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About the authors

A. A. Abduvaitov

Islam Karimov Tashkent State Technical University

Email: ftmet@mail.ru
Uzbekistan, Tashkent, 100095

Kh. Kh. Boltaev

Islam Karimov Tashkent State Technical University

Email: ftmet@mail.ru
Uzbekistan, Tashkent, 100095

B. E. Umirzakov

Islam Karimov Tashkent State Technical University

Email: ftmet@mail.ru
Uzbekistan, Tashkent, 100095

D. A. Tashmukhamedova

Islam Karimov Tashkent State Technical University

Author for correspondence.
Email: ftmet@mail.ru
Uzbekistan, Tashkent, 100095

G. Abdurakhmanov

Mirzo Ulugbek National University of Uzbekistan

Email: ftmet@mail.ru
Uzbekistan, Tashkent, 100174

References

  1. Bube R.H. // Proc. of the Symp. Mater. New Process. Technol. Photovolt. V. 83–11. (New Jersey, 1983) P. 359.
  2. Lee C.H., Park S.W., Jaesun Lee et al. // J. Electron. Mater. 1998. V. 27. No. 6. P. 668.
  3. Рыжков М.С., Худайбердиев Д.А., Козлов Д.А. и др. // Письма в ЖЭТФ. 2022. Т. 115. № 4. С. 230; Ryzhkov M.S., Khudaiberdiev D.A., Kozlov D.A. et al. // JETP Lett. 2022. V. 115. No. 4. P. 202.
  4. Orletskyi I.G., Ilashchuk M.I., Maistruk E.V. et al. // Ukr. J. Phys. 2019. V. 64. No. 2. P. 164.
  5. GuillénCervantes A., BecerrilSilva M., SilvaLópez H.E. et al. // J. Mater. Sci. Mater. Electron. 2020. V. 31. P. 7133.
  6. Жанабергенов Ж., Мирсагатов Ш.А., Каражанов С.Ж., Музаффарова С. // Письма в ЖТФ. 2003. Т. 29. № 21. С. 82; Zhanabergenov Zh., Mirsagatov Sh.A., Karazhanov S. Zh., Muzaffarova S. // Tech. Phys. Lett. 2003. V. 29. No. 11. P. 917.
  7. Умирзаков Б.Е., Содикжанов Ж.Ш., Ташмухамедова Д.А. и др. // Письма в ЖТФ. 2021. Т. 47. № 12. С. 3; Umirzakov B.E., Sodikjanov J.Sh., Tashmukhamedova D.A. et al. // Tech.Phys. Lett. 2021. V. 47. No. 8. P. 620.
  8. Селькин А.В., Юлдашев Н.Х. // Изв. РАН. Сер. физ. 2023. Т. 87. № 6. С. 879; Selkin A.V., Yuldashev N.Kh. // Bull. Russ. Acad. Sci. Phys. 2023. V. 87. № 6. P. 771.
  9. Kapadnis R.S., Kale S.S., Wagh V.G. // IOSR-JEN. 2013. V. 3. No. 8. P. 01.
  10. Михайлов Н.Н., Ремесник В.Г., Алешкин В.Я. и др. // Изв. РАН. Сер. физ. 2023. Т. 87. № 6. С. 861; Mikhailov N.N., Remesnik V.G., Aleshkin V.Ya. et al. // Bull. Russ. Acad. Sci. Phys. 2023. V. 87. No. 6. P. 755.
  11. Иконников А.В., Криштопенко С.С., Бовкун Л.С. и др. // Письма в ЖЭТФ. 2022. Т. 116. № 8. С. 535; Ikonnikov A.V., Krishtopenko S.S., Bovkun L.S. et al. // JETP Lett. 2022. V. 116. No. 8. P. 547.
  12. Рыжков М.C., Козлов Д.А., Худайбердиев Д.А. и др. // Письма в ЖЭТФ. 2022. Т. 117. № 1. С. 50; Ryzhkov M.S., Kozlov D.A., Khudaiberdiev D.A. et al. // JETP Lett. 2023. V. 117. No. 1. P. 44.
  13. Уланов В.А., Зайнуллин Р.Р., Хушея Т.А.Н., Яцык И.В. // Изв. РАН. Сер. физ. 2021. Т. 85. № 14. С. 1682; Ulanov V.A., Zainullin R.R., Housheya T.A.H., Yatsyk I.V. // Bull. Russ. Acad. Sci. Phys. 2021. V. 85. No. 12. P. 1337.
  14. Беляев А.П., Рубец В.П., Антипов В.В., Еремина Е.О. // ФТП. 2010. Т. 44. № 7. С. 978; Belyaev A.P., Rubets V.P., Antipov V.V., Eremina E.O. // Semiconductors. 2010. V. 44. No. 7. P. 946.
  15. Клюй Н.И., Лозинский В.Б., Лукьянов А.Н. и др. // ЖТФ. 2012. Т. 82. № 8. С. 83; Klyui N.I., Lozinskii V.B., Luk’yanov A.N. et al. // Techn. Physics. 2012. V. 57. No. 8. P. 1121.
  16. Wang F., Schwartzman A., Fahrenbruch A.L. et al. // J. Appl. Phys. 1987. V. 62. P. 1469.
  17. Espinoza-Beltrán F.J., Sánchez-Sinencio F., Zelaya-Angel O. et al. // Japan. J. Appl. Phys. 1991. V. 30. Part 2. Art. No. L1715.
  18. Espinoza-Beltrán F.J., Zelaya O., Sánchez-Sinencio F. et al. // J. Vac. Sci. Techol. A. 1993. V. 11. P. 3062.
  19. Zapata-Navarro A., Zapata-Torres M., Sosa V. et al. // J. Vac. Sci. Technol. A. 1994. V. 12. P. 714.
  20. Werthen J.G., Häring J.P., Bube R.H. // J. Appl. Phys. 1983. V. 54. P. 1159.
  21. Болтаев Х.Х., Ташмухамедова Д.А., Умирзаков Б.Е. // Поверхн. Рентген., cинхротрон. и нейтрон. иссл. 2014. № 4. С. 24; Boltaev Kh.Kh., Tashmukhamedova D.A., Umirzakov B.E. // J. Surface Invest. X-ray, Synchrotron Neutron Tech. 2014. V. 8. No. 2. P. 326.
  22. Эргашов Ё.С., Ташмухамедова Д.А., Джурабекова Ф.Г., Умирзаков Б.Е. // Изв. РАН. Сер. физ. 2016. Т. 80. № 2. С. 162; Ergashov E.S., Tashmukhamedova D.A., Djurabekova F.G., Umirzakov B.E. // Bull. Russ. Acad. Sci. Phys. 2016. V. 80. No. 2. P. 138.
  23. Ташмухамедова Д.А., Юсупжанова М.Б. // Поверхн. Рентген., cинхротрон. и нейтрон. иссл. 2016. V. 12. P. 89; Tashmukhamedova D.A., Yusupjanova M.B. // J. Surface Invest. X-ray, Synchrotron Neutron Tech. 2016. V. 10. No. 6. P. 1273.

Supplementary files

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2. Fig. 1. AFM image of the CdTe film surface.

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3. Fig. 2. X-ray phase analysis of CdTe (111).

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4. Fig. 3. Auger spectra: 1 – pure CdTe (111); 2 – CdTe (111) implanted with ions with E₀ = 1 keV at D = 8∙1016 cm⁻²

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5. Fig. 4. Profile of the distribution of O atoms by depth in the CdTeO₃/CdTe(111) system.

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6. Fig. 5. Photoelectron spectra for: 1 – CdTe (111); 2 – CdTe (111) with CdTeO₃ film.

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7. Fig. 6. Dependence of the surface concentration of Cd, Te and O atoms on the irradiation dose for CdTe implanted with ions with E₀ = 15 keV.

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8. Fig. 7. Concentration profiles of the distribution of O atoms by depth for CdTe implanted with ions with E₀ = 15 keV at a dose of D = 10¹⁷ cm⁻²: 1 – before heating; 2 – after heating at T = 800 K.

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