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Title
Authors
Vol 54, No 2 (2025)
Precision etching of aluminum conductors in the technology of switching devices of microsystems technology
Didyk P.I., Zhukov A.A.
PDF
(Rus)
Vol 54, No 3 (2025)
Nanostructured ruthenium etching in three-component Cl2 /O2/Ar plasma
Amirov I.I., Izyumov M.O., Lopaev D.V., Rakhimova T.V., Kropotkin A.N., Voloshin D.G., Palov A.P.
PDF
(Rus)
Vol 53, No 6 (2024)
Plasma Parameters and Si/SiO2 Etching Kinetics in Mixtures of Fluorocarbon Gases with Argon and Helium
Efremov A.M., Betelin V.B., Kwon K.H.
PDF
(Rus)
Vol 52, No 1 (2023)
Параметры газовой фазы и кинетика реактивно-ионного травления SiO2 в плазме CF4/C4F8/Ar/He
Ефремов А., Kwon K.
PDF
(Rus)
Vol 52, No 1 (2023)
Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy
Murin D.B., Chesnokov I.A., Pivovarenok S.A., Efremov A.M.
PDF
(Rus)
Vol 52, No 2 (2023)
Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture
Efremov A.M., Betelin V.B., Kwon K.
PDF
(Rus)
Vol 52, No 4 (2023)
Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures
Efremov A.M., Bobylev A.V., Kwon K.
PDF
(Rus)
Vol 52, No 5 (2023)
The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma
Efremov A.M., Smirnov S.A., Betelin V.B.
PDF
(Rus)
Vol 53, No 4 (2024)
Plasmochemical and Reactive Ion Etching of Gallium Arsenide in Difluorodichloromethane with Helium
Murin D.B., Chesnokov I.A., Gogulev I.A., Anokhin A.L., Moloskin A.E.
PDF
(Rus)
1 - 9 of 9 Items

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