Stabilization of memristor cell states during initial switching process after forming

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A self-consistent model describing the break/restoration of a conducting channel-filament in a memristor cell based on the transport of oxygen vacancies in transition metal oxides is build. The stabilization of the memristor cell conductivity during initial switching from a low-resistance state to a high-resistance state and back is studied.

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作者简介

A. Fadeev

NRC “Kurchatov Institute”

编辑信件的主要联系方式.
Email: AlexVFadeev@gmail.com

Valiev IPT

俄罗斯联邦, Moscow

K. Rudenko

NRC “Kurchatov Institute”

Email: rudenko@ftian.ru

Valiev IPT

俄罗斯联邦, Moscow

参考

  1. Fadeev A.V., Rudenko K.V. Filament-based memristor switching model // Microelectron. Eng. 2024. V. 289 P. 112179. https://doi.org/10.1016/j.mee.2024.112179
  2. Fadeev A.V., Rudenko K.V. Evolution of the Current–Voltage Characteristic of a Bipolar Memristor, Russian Microelectronics. 2024, V. 53(4). P. 297–302. https://doi.org/10.1134/S1063739724600432
  3. Permiakova O.O., Rogozhin A.E., Miakonkikh A.V., Smirnova E.A., Rudenko K.V. Transition between resistive switching modes in asymmetric HfO2-based structures. // Microelectron. Eng. 2023. V. 275. P. 111983. https://doi.org/10.1016/j.mee.2023.111983
  4. Zhang K., Ganesh P., Cao Y. Deterministic Conductive Filament Formation and Evolution for Improved Switching Uniformity in Embedded Metal-Oxide-Based Memristors─A Phase-Field Study. ACS // Appl. Mater. Interfaces 2023. V. 15(17). P. 21219–21227. https://doi.org/10.1021/acsami.3c00371
  5. Roldán, J.B., Miranda E., Maldonado D., Mikhaylov A.N., Agudov N.V., Dubkov A.A., Koryazhkina M.N., González M., Villena M.A., Poblador S., Saludes-Tapia M., Picos R., Jiménez-Molinos F., Stavrinides S.G., Salvador E., Alonso F., Campabadal F., Spagnolo B., Lanza M., Chua L.O. Variability in resistive memories // Adv. Intell. Syst. 2023. V. 5(6). P. 2200338. https://doi.org/10.1002/aisy.202200338
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2. Fig. 1. General diagram of the memristor cell adopted in the model (a), energy diagram of the memristor in the equilibrium state (b), during the RESET switching process (V > 0) (c), during the SET switching process (V < 0) (d)

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3. Fig. 2. Calculated current-voltage characteristics corresponding to the first three memristor switching cycles after forming

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4. Fig. 3. Pulse mode of memristor operation V(t), corresponding to one switching cycle, with reading of the HRS and LRS states

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5. Fig. 4. Dependence of the current strength on the pulse application time during the RESET operation when constructing the I-V characteristics (a), during pulse switching (b), and also during the SET operation when constructing the I-V characteristics (c), during pulse switching (d)

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6. Fig. 5. Dependence of the memristor cell resistance on the number of switchings for different filament radii of the cylindrical filament

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7. Fig. 6. Dependence of the charge passed during SET/RESET operations through the memristor cell on the diameter of the cylindrical filament

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8. Fig. 7. Dependence of the charge passed during SET/RESET operations through the memristor cell on the switching number for filaments with a diameter of 8 nm (a) and 6 nm (b)

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